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| DF005 THRU DF10 Features * Glass Passivated Die Construction * Diffused Junction * Low Forward Voltage Drop, High Current Capability * Surge Overload Rating to 50A Peak * Designed for Printed Circuit Board Applications * Plastic Material - UL Flammability Classification 94V-0 H J L K CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts C BA E D Dim DF Min 7.40 6.20 0.22 1.27 7.60 3.81 8.13 2.40 5.00 0.46 Max 7.90 6.50 0.30 2.03 8.90 4.69 8.51 2.60 5.20 0.58 A B C D E G H J K L Mechanical Data * Case : Molded Plastic * Terminals : Solder Plated Leads, Solderable per MIL-STD-202, Method 208 * Polarity : As Marked on Case * Approx. Weight : 0.38 grams * Mounting Position : Any * Marking : Type Number G A ll Dimens ions in mm Maximum Ratings And Electrical Characteristics (Ratings at 25E ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Symbols Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TA=40E VRMM VRWM VR VRMS Io IFSM VFM IRM I 2t Cj ReJA Tj TSTG DF005 DF01 50 35 100 70 DF02 200 140 DF04 400 280 1.0 50 1.1 10 500 10.4 25 40 DF06 600 420 DF08 800 560 DF10 1000 700 Units Volts Volts Amp Amps Volts i A A2S pF E /W E Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage (per element) @ IF=1.0 A @ TA=25E Peak Reverse Current at Rated DC Blocking Voltage (per element) @ TA=125E I2t Rating for Fusing (t<8.3ms) Typical Junction Capacitance per element (Note 1) Typical Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range -65 to +150 Notes: (1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. (2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas. RATING AND CHARACTERISTIC CURVES DF005 THRU DF10 (A) 1.0 (A) 60 Hz Resistive or Inductive load 10 T j = 25C Pulse Width = 300s 2% duty cycle I F , INST ANT ANEOUS FOR WARD CURRENT FOR WARD CURRENT 1.0 0.5 I (AV) , AVERAGE 0.1 0 40 60 80 100 120 140 0.01 0.4 0.6 0.8 1.0 1.2 1.4 T A , AMBIENT TEMPERA TURE (C) Fi g. 1 Output Current Deratin g Curve V F , INST ANT ANEOUS FOR WARD VOL TAGE (V) Fi g. 2 Typ Forward Characteristics (per element ) 100 (A) 60 Single half-sine-W ave (JEDEC Method) CURRENT 50 C J , CAP ACIT ANCE (pF) T j = 25c f = 1.0 Mhz V sig = 50 mV p-p I FSM , PEAK FOR WARD SURGE 40 30 10 20 10 0 1 10 100 1 1 10 100 NUMBER OF CYCLES AT 60 Hz Fi g. 3 Max Non-Repetitive PeakForward Sur ge Current V R , REVERSE VOL TAGE (V) Fi g. 4 Typ Junction Capacitance (per element ) (A) 100 CURRENT T j = 125C 10 I R , INST ANT ANEOUS REVERSE 1.0 0.1 T j = 25C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RA TED PEAK REVERSE VOL TAGE (%) Fi g. 5 Typ Reverse Characteristics (per element) |
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